| PART |
Description |
Maker |
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| SLA5018 |
N-channel P-channel H-bridge 5 A, 60 V, 0.3 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| FDS6961AZ FDS6961AZL86Z FDS6961AZL99Z |
3.5 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SO-8
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
Dual N-Channel Logic Level PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
| HI3-0508-5Z |
Single 16 and 8/Differential 8-Channel and 4-Channel CMOS Analog Multiplexers 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Intersil, Corp.
|
| FDS8936S |
Dual N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| BSS84DW2 BSS84DW-7-F |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 130 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes, Inc.
|
| CMLDM5757 |
SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
430 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor Corp
|
| BA3506AF-DXT1 BA3420AL-DX BA3410AF-DXE1 BA5412-DX |
0.069 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
2 CHANNEL, AUDIO PREAMPLIFIER, PZIP18
1 CHANNEL, AUDIO PREAMPLIFIER, PDSO16
2 CHANNEL, AUDIO AMPLIFIER, PSIP12
PLL FREQUENCY SYNTHESIZER, 130 MHz, PDSO20
1 CHANNEL, AUDIO PREAMPLIFIER, PSIP7
5 W, 2 CHANNEL, AUDIO AMPLIFIER, PSIP12
|
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
|
